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Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141
Figure 1: P- and B-concentrations as measured by MCs+-SIMS as function of PH3 to SiH4 gas flow ratio, or resp...
Figure 2: (a) Atom probe tomography reconstruction of P-doped Si nanocrystals (red iso-surfaces with ≥70 atom...
Figure 3: (a) Room temperature photoluminescence spectra of P-incorporating Si NCs in SRON (0–0.48 atom %) an...
Figure 4: Low-temperature PL data of samples with 5 nm SRO and 0.59 atom % P (SRO:P), 0.47 atom % B (SRO:B) a...
Figure 5: Transient transmission (TT) dynamics from pump-probe measurements at room temperature of ≈4.5 nm Si...
Figure 6: J–E data of injection-blocking MOS-capacitors with P- or B-incorporating Si NCs in SRO and SRON and...
Figure 7: (a) J–t transients of the same MOS-capacitors as in the previous figure measured at E = 0.2 MV/cm. ...
Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171
Figure 1: Color plot of the RAS signal during reactive ion etching (RIE) of a partially masked laser substrat...
Figure 2: Transients of the average reflected intensity in arbitrary units (a.u.) at a photon energy of 2.5 e...
Figure 3: Scanning electron microscopy (SEM) image of a facet of a lithographically masked and then reactive-...
Figure 4: SIMS intensity – sputter time profile of the CsAl-signal with logarithmic scaling. Displayed are pr...
Figure 5: Illustrations of the wafer layout and sample design (required in the example) to monitor the etch p...
Figure 6: Single transients of the average reflected intensity (top) and the RAS signal (bottom) at 2.4 eV of...
Figure 7: Scanning electron microscope (SEM) images of a film waveguide lens on a laser ridge. (a) Tilted top...